Intel shared the details of 13 chip manufacturing innovation papers for the upcoming VLSI Symposium Chip Design Conference.
The work was performed by Intel Technology Development, Intel Labs, and Intel Design Engineering teams.
Intel executive Ben Sell spoke to the press about four of the revelations this week, and Intel unveiled other circuit innovations that use Compute Near Memory (CNM) techniques to improve the eight-core RISC-V processor.
The 2022 IEEE Symposium on VLSI Technology and Circuits will be held June 13-17 in Honolulu, Hawaii. Intel researchers present 13 papers, including results of a new advanced CMOS FinFET technology, Intel 4, demonstrating a more than 20% performance increase at Iso-Power over Intel 7.
Intel Executive Vice President Raja Koduri will participate in a Circuits panel entitled “Building the 2030 Workforce: How to apply great students and what to teach them?”
Specifically, Intel is releasing results from a new advanced Complementary Metal-Oxide-Semiconductor (CMOS) Fin Field Effect Transistor (FinFET) technology, Intel 4, which demonstrates a transistor performance increase of more than 20% at iso-power over the Intel 7 process.
The Intel 4 process enables a two-fold reduction in the area of the high-performance logic library and makes extensive use of extreme ultraviolet (EUV) to simplify process flow while reducing design effort compared to Intel 7. These and other key technology advancements presented will power a new generation of Intel products as Intel moves forward on its roadmap to launch five process nodes in four years, set out last July.
Intel also introduces new methods and improvements to fundamental circuits that will serve as important components of future solutions. One of these circuit innovations uses Compute Near Memory (CNM) techniques to improve the performance of an eight-core RISC-V processor and will be featured in a Spotlight demo at the symposium. These and future innovations developed at Intel will not only support Intel’s product portfolio, but will also benefit customers of Intel’s new foundry business, Intel Foundry Services (IFS).
Intel will also demonstrate MOCVD of 2D materials directly on a 300mm Si platform, including for the first time p-type WSe2, for BEOL and FEOL applications. MoS2 nFETs show variability that increases with scaled geometry.
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